Renesas Electronics - 2SK3653-A

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2SK3653-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3653-A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .08 W; Terminal Form: GULL WING; Field Effect Transistor Technology: JUNCTION;
Datasheet 2SK3653-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
Maximum Drain Current (ID): .01 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 3
Maximum Power Dissipation (Abs): .08 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 125 Cel
Case Connection: GATE
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e6
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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