Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 2SK3718-AJ |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: R-PDSO-F3; |
| Datasheet | 2SK3718-AJ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .01 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 20 V |
| Maximum Power Dissipation (Abs): | .1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Power Dissipation Ambient: | .1 W |









