Renesas Electronics - 2SK435-C

NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 150 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: O-PBCY-T3;

Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

FDC638P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.048 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55°C to 150°C.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 200 mJ; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 150 V;

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Terminal Position: DUAL; JESD-609 Code: e4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

Fairchild Semiconductor's NDS7002A_NL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 2 ohm RDS. Ideal for switching applications in enhancement mode, it operates b/w -65 to 150 °C with a max power dissipation of 0.3W.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.

STN3P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS breakdown voltage and 3A ID. It's used for switching applications in enhancement mode, featuring 0.16 ohm RDS(on) and built-in diode. The transistor has a GULL WING terminal form, operates in DUAL position, and can withstand peak reflow temp of 260°C.

Diodes Inc. BSS84DW-7-F is a P-CHANNEL FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C with built-in diode elements.

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Maximum Power Dissipation Ambient: 1.4 W; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;

LND150K1-G by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Operating in depletion mode, it has a max power dissipation of 0.36W and can handle a max drain current of 0.013A. With a temp range from -55 to 150 °C, this MOSFET is suitable for various electronic designs.