Renesas Electronics - 2SK435-C

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2SK435-C by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK435-C
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; No. of Terminals: 3;
Datasheet 2SK435-C Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): 4 pF
Maximum Drain Current (ID): .1 A
JEDEC-95 Code: TO-92
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 22 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
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