2SK679A-AZ by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SK679A-AZ
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .75 W; Package Style (Meter): CYLINDRICAL; Minimum DS Breakdown Voltage: 30 V;
Datasheet	2SK679A-AZ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.5 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.75 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	1 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	GATE PROTECTED
Maximum Drain Current (Abs) (ID):	.5 A
Peak Reflow Temperature (C):	260

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