Renesas Electronics - 2SK779

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2SK779 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK779
Description N-CHANNEL; Maximum Drain Current (ID): .12 A; Maximum Drain Current (Abs) (ID): .12 A; Maximum Power Dissipation Ambient: .2 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;
Datasheet 2SK779 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Drain Current (ID): .12 A
Maximum Drain Current (Abs) (ID): .12 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
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