Renesas Electronics - 3SK203

  1. Home
  2. Renesas Electronics - 3SK203
3SK203 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 3SK203
Description RF Small Signal Field-Effect Transistors;
Datasheet 3SK203 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BF512-TAPE-13 by NXP Semiconductors

BF512-TAPE-13

NXP Semiconductors

BF512-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF513-TAPE-7 by NXP Semiconductors

BF513-TAPE-7

NXP Semiconductors

BF513-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. Its compact SO package ensures efficient surface mounting.
934057517215 by NXP Semiconductors

934057517215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): .03 pF;
BF244AZL1 by Onsemi

BF244AZL1

Onsemi

BF244AZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF511TRL by NXP Semiconductors

BF511TRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;
FLC057WG by Eudyna Devices

FLC057WG

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
BF545CTRL by NXP Semiconductors

BF545CTRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Operating Mode: DEPLETION MODE;
2N5486 by Allegro MicroSystems

2N5486

Allegro MicroSystems

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JEDEC-95 Code: TO-226AA; Maximum Operating Temperature: 150 Cel;
J308-T/R by NXP Semiconductors

J308-T/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
2N5246 by Texas Instruments

2N5246

Texas Instruments

2N5246 by Texas Instruments is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and can handle up to 0.36 W power dissipation. The transistor features a SILICON element, 3 terminals, and a CYLINDRICAL package shape.
BF510,215 by NXP Semiconductors

BF510,215

NXP Semiconductors

The NXP Semiconductors BF510,215 is an N-CHANNEL RF FET with a DEPLETION MODE operating mode. It has a 20V DS breakdown voltage and operates in the VERY HIGH FREQUENCY BAND. Ideal for AMPLIFIER applications, this transistor has a max power dissipation of 0.25W and can handle a max drain current of 0.03A.
ATF-38143-TR1G by Agilent Technologies

ATF-38143-TR1G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; Case Connection: SOURCE;
BF556C-TAPE-7 by NXP Semiconductors

BF556C-TAPE-7

NXP Semiconductors

BF556C-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF244BRLRP by Onsemi

BF244BRLRP

Onsemi

BF244BRLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF244BRLRA by Onsemi

BF244BRLRA

Onsemi

BF244BRLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF904WR-T by NXP Semiconductors

BF904WR-T

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;
J310 by National Semiconductor

J310

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 3;
BF512-TAPE-7 by NXP Semiconductors

BF512-TAPE-7

NXP Semiconductors

BF512-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This surface-mount transistor ensures reliable performance up to 150 °C.
2SK544E by Onsemi

2SK544E

Onsemi

The Onsemi 2SK544E is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features METAL-OXIDE SEMICONDUCTOR tech and operates in the VERY HIGH FREQUENCY BAND, making it ideal for high-frequency signal amplification in various electronic devices.
MPF102RLRE by Onsemi

MPF102RLRE

Onsemi

MPF102RLRE by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 125 °C. Featuring a VERY HIGH FREQUENCY BAND, this transistor has 3 terminals and a max Crss of 3 pF.