Renesas Electronics - 3SK205-M

RF Small Signal Field-Effect Transistors;

2N5486PBFREE by Central Semiconductor is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB, operates in DEPLETION MODE, and has a Max Drain Current of 0.03 A. With ULTRA HIGH FREQUENCY BAND compatibility, this transistor is ideal for high-frequency amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): .05 pF; Qualification: Not Qualified;

RF Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 6; JESD-609 Code: e3; Minimum Power Gain (Gp): 24 dB;

BF244BRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Broadcom's ATF-55143-BLKG is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C with a max power dissipation of 0.27W.

BF245ARLRA by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE at 0.1A ID, ideal for ULTRA HIGH FREQUENCY AMPLIFIER applications. The transistor features a ROUND package with THROUGH-HOLE terminals and SILICON element material.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G4;

Broadcom ATF-53189-BLK is an N-channel FET with 14 dB power gain, ideal for amplifier applications in C band. It has a 7V breakdown voltage, 0.3A drain current, and operates in enhancement mode. The transistor features high electron mobility technology, a max power dissipation of 1W, and can withstand temperatures up to 150°C.

Vishay Intertechnology's J310 is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for ULTRA HIGH FREQUENCY SWITCHING applications, it features a SINGLE configuration and DEPLETION MODE operation. The transistor has 3 WIRE terminals, SILICON element material, and 2.5 pF Crss feedback capacitance in a CYLINDRICAL package.

N-CHANNEL; Maximum Operating Temperature: 250 Cel;

BF998R-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount device ensures efficient performance in various electronic circuits.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;

D2089UK by Tt Electronics Plc is an N-CHANNEL RF FET with 65V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring METAL-OXIDE SEMICONDUCTOR tech, it has 0.5pF Crss and GOLD finish terminals in a DISK BUTTON package.

Broadcom's ATF-36163-BLKG is an N-channel RF FET with a 3V DS breakdown voltage, 9.4 dB power gain, and operates in depletion mode. Ideal for amplifier applications in the Ku band, it features a small outline package with Gull Wing terminals and high electron mobility technology. With a max operating temperature of 150°C and 0.18W power dissipation, this transistor offers reliable performance in various RF signal processing systems.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE, HIGH RELIABILITY; Field Effect Transistor Technology: HETERO-JUNCTION;

RF Small Signal Field-Effect Transistors;