3SK205-N by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	3SK205-N
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Terminal Position: RADIAL; Package Style (Meter): DISK BUTTON;
Datasheet	3SK205-N Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	16 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Feedback Capacitance (Crss):	.035 pF
Maximum Drain Current (ID):	25 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	10 V
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-PRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Maximum Drain Current (Abs) (ID):	25 A
Maximum Power Dissipation Ambient:	.2 W

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