Renesas Electronics - 3SK230-U1B

  1. Home
  2. Renesas Electronics - 3SK230-U1B
3SK230-U1B by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 3SK230-U1B
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; No. of Elements: 1;
Datasheet 3SK230-U1B Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .025 A
Maximum Drain Current (Abs) (ID): .025 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BLF888E by NXP Semiconductors

BLF888E

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 104 V; JESD-30 Code: R-CDFM-F4; Package Style (Meter): FLANGE MOUNT;
BF245BRLRP by Onsemi

BF245BRLRP

Onsemi

BF245BRLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
ATF-34143-TR1G by Broadcom

ATF-34143-TR1G

Broadcom

Broadcom's ATF-34143-TR1G is an N-channel RF FET with 5.5V DS breakdown voltage and 16dB power gain, ideal for amplifier applications in X-band frequencies. This single configuration transistor operates in depletion mode, with a max power dissipation of 0.725W at 160°C ambient temperature. It features a gull wing terminal form and matte tin finish in a small outline package style.
ATF-36077-TR1 by Broadcom

ATF-36077-TR1

Broadcom

Broadcom ATF-36077-TR1 is an N-channel FET with 3V DS breakdown voltage and 11dB power gain, ideal for amplifier applications in KU band. It features a ceramic-metal sealed co-fired package, flat terminals, and gold finish, operating in depletion mode with high electron mobility technology.
BF245BRLRA by Onsemi

BF245BRLRA

Onsemi

BF245BRLRA by Onsemi is an N-CHANNEL RF FET with a 30V DS breakdown voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
934021490215 by NXP Semiconductors

934021490215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;
BF1100R by NXP Semiconductors

BF1100R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: MATTE TIN; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PDSO-G4;
BF998RT/R by NXP Semiconductors

BF998RT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;
934021470215 by NXP Semiconductors

934021470215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE; Transistor Application: SWITCHING;
2N4222A by NXP Semiconductors

2N4222A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Case Connection: SHIELD; Maximum Feedback Capacitance (Crss): 2 pF;
TGF1350SPCX by Texas Instruments

TGF1350SPCX

Texas Instruments

TGF1350SPCX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.
BF991-TAPE-13 by NXP Semiconductors

BF991-TAPE-13

NXP Semiconductors

BF991-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max drain current of 20 mA and a breakdown voltage of 20 V. This surface-mount transistor operates in the very high frequency band, ideal for compact designs.
BF245B by NXP Semiconductors

BF245B

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;
BF998E6327 by Infineon Technologies

BF998E6327

Infineon Technologies

BF998E6327 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has a 0.03A Drain Current and 0.2W Power Dissipation. Ideal for ULTRA HIGH FREQUENCY applications, this DUAL GATE transistor operates at up to 150°C temperature.
2N5486 by Solitron Devices

2N5486

Solitron Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;
2N5485 by NXP Semiconductors

2N5485

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Package Body Material: PLASTIC/EPOXY; Transistor Application: AMPLIFIER;
SMMBFJ309LT1G by Onsemi

SMMBFJ309LT1G

Onsemi

SMMBFJ309LT1G by Onsemi is an N-CHANNEL RF FET with a max power dissipation of 0.225W and operating temp of 150°C. It is surface mountable and features JUNCTION technology, making it ideal for small outline applications in electronics requiring high-frequency signal amplification.
MMBF5486 by National Semiconductor

MMBF5486

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; No. of Terminals: 3;
BF244BZL1 by Onsemi

BF244BZL1

Onsemi

BF244BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF1212WR by NXP Semiconductors

BF1212WR

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Maximum Feedback Capacitance (Crss): .03 pF;