Renesas Electronics - 4AM11

  1. Home
  2. Renesas Electronics - 4AM11
4AM11 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 4AM11
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Drain Current (ID): 5 A; Maximum Drain Current (Abs) (ID): 5 A; Maximum Operating Temperature: 150 Cel;
Datasheet 4AM11 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 28 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 5 A
Maximum Drain Current (Abs) (ID): 5 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP31C by Mospec Semiconductor

TIP31C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BC548 by Sid Microeletronica S/a

BC548

Sid Microeletronica S/a

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by Weitron Technology

MMBT2907A

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
SI4532DY by Vishay Intertechnology

SI4532DY

Vishay Intertechnology

SI4532DY by Vishay Intertechnology is a N-CHANNEL AND P-CHANNEL transistor with a max drain current of 3.9A and max power dissipation of 2W. It is a surface mount device suitable for applications requiring metal-oxide semiconductor technology, such as temperature-sensitive systems operating up to 150°C.
TIP125 by Sinyork

TIP125

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .065 W; Maximum Collector Current (IC): .005 A; Minimum DC Current Gain (hFE): 1000;
TIP125 by Silicon Group

TIP125

Silicon Group

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
SC0321 by Fairchild Semiconductor

SC0321

Fairchild Semiconductor

SC0321 by Fairchild Semiconductor is an NPN transistor with a max power dissipation of 115W and max collector current of 10A. With a min DC current gain of 20, it operates up to 175°C. Ideal for applications requiring high power handling and reliable performance in various electronic circuits.
BC337-40 by Jiangsu Changjiang Electronics Technology

BC337-40

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;
BC548C by Unisonic Technologies

BC548C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BD140 by Philips Semiconductors

BD140

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N3055 by Unisonic Technologies

2N3055

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP110 by Asi Semiconductor

TIP110

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
2N3055 by Ledex Lucas Products

2N3055

Ledex Lucas Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP29C by Boca Semiconductor

TIP29C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP41C by North American Philips Discrete Products Div

TIP41C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BS170 by Plessey Semiconductors Discrete Components Div

BS170

Plessey Semiconductors Discrete Components Div

Other Transistors;
TIP112 by Sinyork

TIP112

Sinyork

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BC548 by Sinyork

BC548

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC337-16 by Philips Semiconductors

BC337-16

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; JESD-609 Code: e3;
TIP142 by Semitronics

TIP142

Semitronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;