Renesas Electronics - 4AM13

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4AM13 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 4AM13
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3 A; Maximum Operating Temperature: 150 Cel;
Datasheet 4AM13 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 28 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3 A
Maximum Drain Current (Abs) (ID): 3 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
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