Renesas Electronics - 4AM14

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4AM14 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 4AM14
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 8 A; Maximum Drain Current (Abs) (ID): 8 A;
Datasheet 4AM14 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 32 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 8 A
Maximum Drain Current (Abs) (ID): 8 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
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