Renesas Electronics - 4AM15

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4AM15 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 4AM15
Description N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 4 A;
Datasheet 4AM15 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 32 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4 A
Maximum Drain Current (Abs) (ID): 4 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: NO
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