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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | 4AM16 |
| Description | N-CHANNEL AND P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Drain-Source On Resistance: .24 ohm; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; |
| Datasheet | 4AM16 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 8 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 12 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 28 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T12 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 8 A |
| Maximum Drain-Source On Resistance: | .24 ohm |









