Renesas Electronics - 71V2546S100PFG

  1. Home
  2. Renesas Electronics - 71V2546S100PFG
71V2546S100PFG by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 71V2546S100PFG
Description ZBT SRAM; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Terminal Finish: Matte Tin (Sn) - annealed; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet 71V2546S100PFG Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Memory IC Type: ZBT SRAM
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IDT71V424S10PHGI by Renesas Electronics

IDT71V424S10PHGI

Renesas Electronics

The Renesas Electronics IDT71V424S10PHGI is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 44 terminals in a small outline package. Ideal for industrial applications requiring fast and reliable memory storage.
IDT71V416S15PHGI8 by Integrated Device Technology

IDT71V416S15PHGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words Code: 256K;
M5M51008DVP-70H by Mitsubishi Electric

M5M51008DVP-70H

Mitsubishi Electric

STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Qualification: Not Qualified;
23LC1024-I/ST by Microchip Technology

23LC1024-I/ST

Microchip Technology

23LC1024-I/ST by Microchip Technology is a synchronous SRAM with an organization of 128KX8. It operates at a max clock frequency of 20 MHz and has a memory density of 1048576 bit. This memory IC type is commonly used in industrial applications requiring fast and reliable data storage.
71024S20TYGI8 by Renesas Electronics

71024S20TYGI8

Renesas Electronics

Renesas Electronics 71024S20TYGI8 is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It has a max access time of 20ns and consumes up to 140mA. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
CY62148ELL-55SXIT by Infineon Technologies

CY62148ELL-55SXIT

Infineon Technologies

CY62148ELL-55SXIT by Infineon Technologies is a 512Kx8 SRAM with 55ns access time, operating at 5V. It features a small outline package, Gull Wing terminal form, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in industrial environments.
5962-8685909LA by Integrated Device Technology

5962-8685909LA

Integrated Device Technology

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 5.08 mm;
CY62126EV30LL-45ZSXI by Cypress Semiconductor

CY62126EV30LL-45ZSXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
7130LA20JG8 by Renesas Electronics

7130LA20JG8

Renesas Electronics

The Renesas Electronics 7130LA20JG8 is a 1Kx8 DUAL-PORT SRAM with 8192-bit memory density. It operates at 5V, has an access time of 20ns, and features a max standby current of 0.0015A. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.
CY62147EV30LL-45B2XI by Infineon Technologies

CY62147EV30LL-45B2XI

Infineon Technologies

Infineon's CY62147EV30LL-45B2XI is a 256Kx16 SRAM with 3.3V nominal voltage, operating at -40 to 85°C. It features a very thin profile grid array package, 0.75mm terminal pitch, and 45ns access time. Ideal for industrial applications requiring fast and reliable parallel memory storage.
DS1225Y-200IND by Maxim Integrated

DS1225Y-200IND

Maxim Integrated

DS1225Y-200IND by Maxim Integrated is an 8Kx8 SRAM with 65536-bit memory density. It operates at 5V, has a max access time of 200ns, and consumes up to 85mA. Ideal for industrial applications requiring non-volatile memory storage in microelectronic assemblies.
CY62177EV30LL-55BAXIT by Infineon Technologies

CY62177EV30LL-55BAXIT

Infineon Technologies

Infineon's CY62177EV30LL-55BAXIT is a 2MX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a grid array package, fine pitch style, and operates in industrial temperature range (-40 to 85°C). Ideal for applications requiring fast access times and high memory density.
IS61WV102416BLL-10TLI by Integrated Silicon Solution

IS61WV102416BLL-10TLI

Integrated Silicon Solution

IS61WV102416BLL-10TLI by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. Featuring 10ns access time, it's ideal for high-speed applications requiring 16-bit memory width and common I/O type. This CMOS technology-based chip offers 1M words code and supports parallel interface with low standby current of 0.02 Amp.
71024S15YGI8 by Renesas Electronics

71024S15YGI8

Renesas Electronics

Renesas Electronics 71024S15YGI8 is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It has a max access time of 15ns and can operate in industrial temperature range. Suitable for applications requiring fast and reliable memory storage in compact electronic devices.
71V124SA10PHGI8 by Integrated Device Technology

71V124SA10PHGI8

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP2; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;
CY7C028-15AI by Cypress Semiconductor

CY7C028-15AI

Cypress Semiconductor

CY7C028-15AI by Cypress Semiconductor is a 64KX16 SRAM with 3-STATE output, operating at 5V. It has a max access time of 15ns and is ideal for industrial applications requiring fast and reliable memory storage. The package style is flatpack with low profile, fine pitch terminals.
71V416S10PHG8 by Renesas Electronics

71V416S10PHG8

Renesas Electronics

The Renesas Electronics 71V416S10PHG8 is a 256Kx16 SRAM with a supply voltage of 3.3V, operating in asynchronous mode with common I/O type. It features a max access time of 10ns and is suitable for applications requiring fast and reliable memory storage in commercial-grade electronic devices.
5962-8866204NA by National Semiconductor

5962-8866204NA

National Semiconductor

National Semiconductor's 5962-8866204NA is a MILITARY-grade SRAM with 32KX8 organization, 262144 bit memory density, and 45 ns max access time. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.
5962-9461110HMA by White Microelectronics

5962-9461110HMA

White Microelectronics

SRAM MODULE; Temperature Grade: MILITARY; No. of Terminals: 68; Package Code: QFP; Package Shape: SQUARE; Memory Density: 16777216 bit;
IDT70V24L20PFGI8 by Integrated Device Technology

IDT70V24L20PFGI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LFQFP; Package Shape: SQUARE; Maximum Supply Current: 195 mA;