Renesas Electronics - 7M1001S30CB

7M1001S30CB by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 7M1001S30CB
Description MULTI-PORT SRAM; Temperature Grade: MILITARY; No. of Terminals: 64; Package Code: DIP; Package Shape: RECTANGULAR; Power Supplies (V): 5;
Datasheet 7M1001S30CB Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Standby Current: .245 Amp
Organization: 128KX8
Output Characteristics: 3-STATE
Maximum Seated Height: 9.652 mm
Minimum Supply Voltage (Vsup): 4.5 V
Sub-Category: SRAMs
Surface Mount: NO
Maximum Supply Current: 1130 mA
Terminal Finish: TIN LEAD
No. of Terminals: 64
No. of Words: 131072 words
Terminal Position: DUAL
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Screening Level: MIL-STD-883 Class B
Technology: CMOS
JESD-30 Code: R-CDMA-T64
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 125 Cel
Package Code: DIP
Width: 15.24 mm
Input/Output Type: COMMON
No. of Ports: 2
Memory Density: 1048576 bit
Minimum Standby Voltage: 4.5 V
Memory IC Type: MULTI-PORT SRAM
JESD-609 Code: e0
Minimum Operating Temperature: -55 Cel
Memory Width: 8
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: DIP64,.6
Length: 81.28 mm
Maximum Access Time: 30 ns
No. of Words Code: 128K
Nominal Supply Voltage / Vsup (V): 5
Parallel or Serial: PARALLEL
Terminal Pitch: 2.54 mm
Temperature Grade: MILITARY
Maximum Supply Voltage (Vsup): 5.5 V
Power Supplies (V): 5
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