AB1A3M by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	AB1A3M
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): .7 A; Qualification: Not Qualified;
Datasheet	AB1A3M Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.7 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-92
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	135
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.75 W
Maximum Collector-Emitter Voltage:	25 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 1

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