Renesas Electronics - AN1F4N

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AN1F4N by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number AN1F4N
Description PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 85;
Datasheet AN1F4N Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .3 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 85
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