AN1L3M by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	AN1L3M
Description	PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
Datasheet	AN1L3M Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	500 ns
JEDEC-95 Code:	TO-92
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	70
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.25 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	5000 ns
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Additional Features:	BUILT IN BIAS RESISTOR RATIO 1

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