BA1A4P-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	BA1A4P-A
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 95; Terminal Form: THROUGH-HOLE;
Datasheet	BA1A4P-A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	200 ns
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	95
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
Maximum Turn Off Time (toff):	6000 ns
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Peak Reflow Temperature (C):	NOT SPECIFIED

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