Renesas Electronics - BA1L3N-A

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BA1L3N-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number BA1L3N-A
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR RATIO 2.12; Package Style (Meter): IN-LINE;
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 200 ns
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 80
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 6000 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT IN BIAS RESISTOR RATIO 2.12
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