Renesas Electronics - BB301C

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BB301C by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number BB301C
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; JESD-30 Code: R-PDSO-G4; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Datasheet BB301C Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .025 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 4
Maximum Power Dissipation (Abs): .1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Minimum Power Gain (Gp): 22 dB
Maximum Feedback Capacitance (Crss): .04 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 6 V
Qualification: Not Qualified
Additional Features: LOW NOISE
Maximum Drain Current (Abs) (ID): .025 A
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