Renesas Electronics - BN1L3M-A

  1. Home
  2. Renesas Electronics - BN1L3M-A
BN1L3M-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number BN1L3M-A
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR RATIO 1; JESD-30 Code: R-PSIP-T3;
Datasheet BN1L3M-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 500 ns
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 5000 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: BUILT IN BIAS RESISTOR RATIO 1
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

JANTX2N2222AUB by Optek Technology

JANTX2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3904-7-F by Diodes Incorporated

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
MMBTA56LT1G by Onsemi

MMBTA56LT1G

Onsemi

MMBTA56LT1G by Onsemi is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.3W, hFE of 100, and fT of 50MHz. Ideal for amplifier applications due to its small outline package style and operating temperature range from -55°C to 150°C.
BC817-40 by Philips Components

BC817-40

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
MMBT3904,215 by NXP Semiconductors

MMBT3904,215

NXP Semiconductors

NXP Semiconductors' MMBT3904,215 is a NPN BJT transistor with 40V VCE, 0.2A IC, and 300MHz fT. Ideal for switching applications, it has a max operating temp of 150°C and features GULL WING terminals in a SMALL OUTLINE package.
BC547B by National Semiconductor

BC547B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222AUB by Optek Technology

2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846B,235 by Nexperia

BC846B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
PN2222ABU by Onsemi

PN2222ABU

Onsemi

PN2222ABU by Onsemi is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 40 and fast turn on/off times (ton: 35ns, toff: 285ns).
BC817-25 by Philips Components

BC817-25

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G3;
MMBT3906,215 by Nexperia

MMBT3906,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
BC846B by Taiwan Semiconductor

BC846B

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;
BC856B,215 by Nexperia

BC856B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC817-25 by Taitron Components

BC817-25

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
BC847B by ROHM

BC847B

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC547B by NXP Semiconductors

BC547B

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2219A by Motorola

2N2219A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel;
BC847C by NXP Semiconductors

BC847C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2219A by Tt Electronics Plc

2N2219A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM;
BC858B,215 by NXP Semiconductors

BC858B,215

NXP Semiconductors

BC858B,215 by NXP Semiconductors is a PNP BJT for switching applications. With VCEsat of 0.65V and hFE of 220, it operates at max 150°C with IC of 0.1A. Its small outline package makes it suitable for surface mount designs.