Renesas Electronics - BRA114ETP

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BRA114ETP by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number BRA114ETP
Description PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 30;
Datasheet BRA114ETP Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .4 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 30
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