Renesas Electronics - BRA144ETP

  1. Home
  2. Renesas Electronics - BRA144ETP
BRA144ETP by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number BRA144ETP
Description PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;
Datasheet BRA144ETP Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .4 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3904 by Taitron Components

2N3904

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 250 ns;
SBC817-25LT1G by Good-ark Electronics

SBC817-25LT1G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
JANTX2N2222AUA by Micropac Industries

JANTX2N2222AUA

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
BC547CTFR by Fairchild Semiconductor

BC547CTFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847BW-7-F by Diodes Incorporated

BC847BW-7-F

Diodes Incorporated

Diodes Inc. BC847BW-7-F is a NPN BJT transistor with 200 min hFE, 45V VCEO, and 300MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Max power dissipation of 0.2W and operating temp up to 150°C make it suitable for various electronic designs.
2N2907A by Semiconductor Technology

2N2907A

Semiconductor Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC817-40LT1G by Onsemi

BC817-40LT1G

Onsemi

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.
2N2222A by Onsemi

2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
MMBT2907A by Secos

MMBT2907A

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
BC817-25,235 by Nexperia

BC817-25,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: .7 V;
MMBT3904-TP by Micro Commercial Components

MMBT3904-TP

Micro Commercial Components

MMBT3904-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, ideal for amplifier applications. With max power dissipation of 0.35W and max collector-emitter voltage of 40V, it operates at up to 150°C. This surface mount device has a small outline package style and offers a transition frequency of 300MHz.
BC547B by NXP Semiconductors

BC547B

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847,215 by Nexperia

BC847,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222AUA by Silicon Transistor

JANTX2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
PIMN31,115 by NXP Semiconductors

PIMN31,115

NXP Semiconductors

PIMN31,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.42W, and operates at temperatures up to 150°C. Ideal for switching applications in small outline packages with gull wing terminals.
BC547BBU by Onsemi

BC547BBU

Onsemi

BC547BBU by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 200, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 45V and max. collector current of 0.1A in a cylindrical package style with through-hole terminals.
BC817-25LT1G by Onsemi

BC817-25LT1G

Onsemi

BC817-25LT1G by Onsemi is a NPN BJT with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high transition frequency. Suitable for surface mount designs requiring low power dissipation and moderate collector current.
2N2907AUB by Optek Technology

2N2907AUB

Optek Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N3906 by Swampscott Electronics

2N3906

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by Shanghai Lunsure Electronic Technology

MMBT3906

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY;