Renesas Electronics - CD4014AH

DS1996L-F5 by Maxim Integrated is a 64KX1 MEMORY CIRCUIT with 65536 bit Memory Density. It operates in ASYNCHRONOUS mode at -40 to 70 °C, with Power Supplies of 3/5 V. This METAL DISK BUTTON IC is used for data storage applications requiring fast access times up to 15000 ns.

M36LLR8760B1ZAQE by STMicroelectronics is a low-profile, asynchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C, ideal for compact applications. With 88 terminals in a fine-pitch grid array, it ensures efficient performance in various electronic devices.

TMS2150-35JD by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 35ns access time, ideal for commercial applications. Operating at 5V, it has a max standby current of 0.145A and operates in temperatures ranging from 0 to 70°C. The package style is IN-LINE with a RECTANGULAR shape and CERAMIC body material.

Other Memory ICs;

47L64-I/SN by Microchip Technology is a small outline memory IC with 8KX8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is suitable for industrial applications requiring a memory density of 65536 bit, fast access time of 550 ns, and a supply voltage range from 2.7V to 3.6V.

Other Memory ICs;

SN74LS601ADW by Texas Instruments is a 64KX1 memory circuit IC with TTL technology. It operates asynchronously at 5V, with a memory density of 65536 bits. This small outline package is surface mountable and suitable for various commercial applications requiring reliable memory storage.

MEMORY CIRCUIT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

MEMORY CIRCUIT; Package Shape: UNSPECIFIED; Technology: CMOS; Terminal Position: UNSPECIFIED; Terminal Form: UNSPECIFIED; Terminal Finish: TIN LEAD;

Other Memory ICs;

ST25DV16K-IER6T3 by STMicroelectronics is a 16KX1 MEMORY CIRCUIT with 16384 bit Memory Density. It operates at 3.3V, -40 to 85 °C temperature range, in SYNCHRONOUS mode. Ideal for industrial applications requiring small outline, thin profile ICs with shrink pitch package style.

TMS2150-9JL by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 90ns access time, 145mA max supply current, and operates at 5V. It is used in applications requiring fast memory access and low power consumption in commercial-grade environments.

47C16-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 2KX8 organization. It operates at a voltage range of 4.5V to 5.5V and has a memory density of 16384 bits. This small outline package is ideal for industrial applications requiring fast access times and reliable data storage.

The Texas Instruments SNC54AS870FH is a MIL-STD-883 Class B (Modified) rated TTL memory IC in a ceramic chip carrier package. With 28 terminals and operating temperatures ranging from -55°C to 125°C, it's ideal for military-grade applications requiring high reliability and performance. This surface-mount IC features a square package shape with no lead terminals, making it suitable for rugged environments.

M36W108B100ZN6 from STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at supply voltages of 2.7V to 3.6V and supports industrial applications with a max temp of 85 °C. Its compact design (11.8mm x 9.8mm) ensures efficient space utilization in electronic devices.

DS1992L-F5+ by Analog Devices is a 1KX1 MEMORY CIRCUIT with 1024 bit memory density. It operates in ASYNCHRONOUS mode at temperatures from -40 to 70 °C, powered by 2.8-6 V supplies. This METAL package IC is ideal for applications requiring fast access times and low power consumption.

Other Memory ICs;

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TO-92; Package Shape: ROUND; Terminal Finish: MATTE TIN;

M36W108B100ZN5T by STMicroelectronics is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and temperature range from -20 °C to 85°C. This rectangular package with grid array style is suitable for various applications requiring high-density memory storage.

Other Memory ICs;