Renesas Electronics - CE2A3Q-T-AZ

  1. Home
  2. Renesas Electronics - CE2A3Q-T-AZ
CE2A3Q-T-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number CE2A3Q-T-AZ
Description NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;
Datasheet CE2A3Q-T-AZ Datasheet
NAME DESCRIPTION
Other Names: 2156-CE2A3Q-T-AZ
RENRNSCE2A3Q-T-AZ
Maximum Collector Current (IC): 2 A
Maximum Power Dissipation (Abs): 1 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 500
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2222A by Semiconductor Technology

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUB by Micropac Industries

JANTX2N2222AUB

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Application: SWITCHING;
BC556BTF by Fairchild Semiconductor

BC556BTF

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
2N2222AUB by Cobham Plc

2N2222AUB

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDSO-N3; Minimum DC Current Gain (hFE): 100;
BC817-40 by SPC TECHNOLOGY/ MULTICOMP

BC817-40

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;
2N3904BU by Onsemi

2N3904BU

Onsemi

The Onsemi 2N3904BU is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Its through-hole package makes it suitable for various electronic circuits.
BC846B by Rectron

BC846B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
MMBT2907A by Changzhou Galaxy Century Microelectronics

MMBT2907A

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
2N2219A by Microchip Technology

2N2219A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
BC847C by Taitron Components

BC847C

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;
2N2907AUB by Silicon Transistor

2N2907AUB

Silicon Transistor

2N2907AUB is a PNP silicon transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in small signal applications where low power dissipation and high DC current gain (hFE) are required.
JANTX2N2222AUA by M/a-com Technology Solutions

JANTX2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 4; Terminal Form: NO LEAD;
2N2222A by National Semiconductor

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
BC817-16LT1G by Onsemi

BC817-16LT1G

Onsemi

BC817-16LT1G by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.3W. It has a min DC current gain of 100, operates at temperatures up to 150°C, and can handle a max collector-emitter voltage of 45V. This small outline transistor is ideal for applications requiring high frequency transitions up to 100MHz in surface mount configurations.
MMBT2222A by Nexperia

MMBT2222A

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 250 ns;
2N3906 by Fairchild Semiconductor

2N3906

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
FMMT493TA by Diodes Incorporated

FMMT493TA

Diodes Incorporated

FMMT493TA by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 1A, and min DC current gain of 20. With a package style of small outline and surface mount capability, it operates up to 150°C and has a transition frequency of 150MHz.
ULN2803AFWG(O,ELM) by Toshiba

ULN2803AFWG(O,ELM)

Toshiba

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
SBC846BLT1G by Onsemi

SBC846BLT1G

Onsemi

SBC846BLT1G by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and max operating temp of 150°C.
BC847B by National Semiconductor

BC847B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;