Renesas Electronics - FA4F3M-T1B

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FA4F3M-T1B by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number FA4F3M-T1B
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 8;
Datasheet FA4F3M-T1B Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 8
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