Renesas Electronics - FA4L4Z-T1B-A

  1. Home
  2. Renesas Electronics - FA4L4Z-T1B-A
FA4L4Z-T1B-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number FA4L4Z-T1B-A
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Terminal Finish: TIN BISMUTH;
Datasheet FA4L4Z-T1B-A Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 135
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SMMBT4401LT1G by Onsemi

SMMBT4401LT1G

Onsemi

SMMBT4401LT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150°C, it meets AEC-Q101 standards for automotive use.
PMBT2222A,215 by NXP Semiconductors

PMBT2222A,215

NXP Semiconductors

The NXP Semiconductors PMBT2222A,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, min hFE of 40, and max IC of 0.6A. With a package style of small outline and peak reflow temp of 260C, it operates b/w -65 to 150 °C for various electronic circuits.
2N3906 by Vishay Intertechnology

2N3906

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A;
BC547C by Central Semiconductor

BC547C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N2905A by Microchip Technology

2N2905A

Microchip Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N3906 by Diodes Incorporated

2N3906

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
BC847C by Allegro MicroSystems

BC847C

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
SMBT2907AE6327HTSA1 by Infineon Technologies

SMBT2907AE6327HTSA1

Infineon Technologies

SMBT2907AE6327HTSA1 by Infineon is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 60V, max collector current of 0.6A, and min DC current gain of 50. Ideal for small outline packages in high-speed switching circuits up to 200MHz.
JANTX2N2222A by Onsemi

JANTX2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847C-13-F by Diodes Incorporated

BC847C-13-F

Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
BC857C,215 by Nexperia

BC857C,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
BC847BLT1G by Onsemi

BC847BLT1G

Onsemi

BC847BLT1G by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 200, and fT of 100MHz. With max ratings of 45V VCEO and 0.1A IC, it operates b/w -55 to 150°C.
2N2222A by Space Power Electronics

2N2222A

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222ALT1 by Shandong Yiguang Electronic Joint Stock

MMBT2222ALT1

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N2222AUB by Silicon Transistor

2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847BT116 by ROHM

BC847BT116

ROHM

ROHM BC847BT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 200, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150°C and transition frequency of 200MHz. Its GULL WING terminals make it suitable for surface mount designs.
JANTX2N2222A by Cobham Plc

JANTX2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; Package Style (Meter): CYLINDRICAL;
2N2905A by Silicon Transistor

2N2905A

Silicon Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222A by Continental Device India

2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3904TFR by Fairchild Semiconductor

2N3904TFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;