Renesas Electronics - FB1F3P-T1B

  1. Home
  2. Renesas Electronics - FB1F3P-T1B
FB1F3P-T1B by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number FB1F3P-T1B
Description Other Transistors;
Datasheet FB1F3P-T1B Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC847C by Shanghai Lunsure Electronic Technology

BC847C

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP112 by Iskra Semic Capacitors Industry

TIP112

Iskra Semic Capacitors Industry

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC327-25 by Tt Electronics Plc

BC327-25

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
TIP117 by Sinyork

TIP117

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .05 W; Maximum Collector Current (IC): .004 A; Minimum DC Current Gain (hFE): 1000;
2N2222A by Boca Semiconductor

2N2222A

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B by Vishay Intertechnology

BC847B

Vishay Intertechnology

Vishay Intertechnology's BC847B NPN transistor has a max power dissipation of 0.3W, min DC current gain of 200, and max operating temp of 150°C. Ideal for surface mount applications in electronics due to its single configuration and matte tin terminal finish.
MJE3055T by Samsung

MJE3055T

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BD138 by Telefunken Microelectronics

BD138

Telefunken Microelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD140 by Shanghai Lunsure Electronic Technology

BD140

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC548 by Sid Microeletronica S/a

BC548

Sid Microeletronica S/a

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BD139-16 by Comset Semiconductors

BD139-16

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
PZT2222A by Weitron Technology

PZT2222A

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
BC547C by Synsemi

BC547C

Synsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222A by Gec Plessey Semiconductors

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3904 by Vishay Intertechnology

2N3904

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC337-40 by Vishay Intertechnology

BC337-40

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;
FDV302P-NB8V001 by Fairchild Semiconductor

FDV302P-NB8V001

Fairchild Semiconductor

FDV302P-NB8V001 by Fairchild Semiconductor is a P-CHANNEL FET with 0.12A max drain current and 0.35W max power dissipation. It operates in enhancement mode, suitable for surface mount applications up to 150°C. Ideal for low-power circuit designs requiring single configuration transistors.
TIP32C by Unisonic Technologies

TIP32C

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MMBT4401 by Sinyork

MMBT4401

Sinyork

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
TIP41C by Transys Electronics

TIP41C

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;