Renesas Electronics - FB1L3N-T2B-AT

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FB1L3N-T2B-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number FB1L3N-T2B-AT
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .7 A; Minimum DC Current Gain (hFE): 135; Transistor Element Material: SILICON;
Datasheet FB1L3N-T2B-AT Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .7 A
Maximum Power Dissipation (Abs): .2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 135
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