Renesas Electronics - FN1A3Q-T1B-AT

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FN1A3Q-T1B-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number FN1A3Q-T1B-AT
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 35; Transistor Element Material: SILICON;
Datasheet FN1A3Q-T1B-AT Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 35
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