FN1F4M-T2B by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	FN1F4M-T2B
Description	PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 60; Transistor Element Material: SILICON;
Datasheet	FN1F4M-T2B Datasheet

NAME	DESCRIPTION
Maximum Collector Current (IC):	.1 A
Maximum Power Dissipation (Abs):	.2 W
Transistor Element Material:	SILICON
No. of Elements:	1
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	60

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