Renesas Electronics - FN4F4N-A

  1. Home
  2. Renesas Electronics - FN4F4N-A
FN4F4N-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number FN4F4N-A
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
Datasheet FN4F4N-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 90
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .2 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 0.46
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

JANTX2N2222AUA by Vpt Components

JANTX2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Package Body Material: PLASTIC/EPOXY;
BC547C-G by Weitronic Enterprise

BC547C-G

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847BS,115 by Nexperia

BC847BS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
MMBT3904 by Vishay Semiconductors

MMBT3904

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-236AB;
BC847C by National Semiconductor

BC847C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2219A by Digitron Semiconductors

2N2219A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-T3;
MMBT2222A by Diotec Semiconductor Ag

MMBT2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
MMBT2907A by Vishay Semiconductors

MMBT2907A

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BC817-40W,115 by NXP Semiconductors

BC817-40W,115

NXP Semiconductors

NXP Semiconductors' BC817-40W,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it has a transition frequency of 100MHz making it suitable for high-speed switching circuits.
2N2907A by Baneasa S A

2N2907A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Terminal Position: BOTTOM;
BC817-25W,115 by NXP Semiconductors

BC817-25W,115

NXP Semiconductors

NXP Semiconductors' BC817-25W,115 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. With a compact small outline package, it features GULL WING terminals for surface mount assembly.
MMBT2222ALT1G by Rochester Electronics

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC846B by Unisonic Technologies

BC846B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC847BLT3G by Onsemi

BC847BLT3G

Onsemi

BC847BLT3G by Onsemi is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 45V and a min DC current gain of 200. It is commonly used in applications such as amplifiers, switches, and general-purpose circuits.
BC847C by Unisonic Technologies

BC847C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC547B by Secos

BC547B

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
BC807-25LT1G by Onsemi

BC807-25LT1G

Onsemi

BC807-25LT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 160, and IC of 0.5A. Ideal for switching applications, it operates b/w -55 to 150 °C and has a max VCE of 45V. With a small outline package style and surface mount capability, it offers high performance in compact designs.
BC817-25 by Taitron Components

BC817-25

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
SBC856BLT1G by Onsemi

SBC856BLT1G

Onsemi

SBC856BLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 220, and VCE max of 65V. Ideal for small outline applications, it operates b/w -55 to 150°C and has a transition frequency of 100MHz.
BC847B by Changzhou Galaxy Century Microelectronics

BC847B

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;