Renesas Electronics - GA1F4Z-L64

  1. Home
  2. Renesas Electronics - GA1F4Z-L64
GA1F4Z-L64 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number GA1F4Z-L64
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 135; No. of Elements: 1;
Datasheet GA1F4Z-L64 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .15 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 135
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC81725 by Zetex Plc

BC81725

Zetex Plc

BC81725 by Zetex Plc is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for small signal applications in electronics due to its high transition frequency of 200MHz and compact small outline package. Suitable for surface mount designs requiring low power dissipation and high reliability.
MMBT5401LT1G by Onsemi

MMBT5401LT1G

Onsemi

MMBT5401LT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 150V, max collector current of 0.5A, and min DC current gain of 50. With a package style of small outline and surface mount capability, it operates b/w -55 to 150 °C temperature range.
2N2222A by Semitronics

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846A,215 by NXP Semiconductors

BC846A,215

NXP Semiconductors

BC846A,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and a min DC current gain of 110 (hFE). With a max operating temperature of 150°C, it is suitable for small outline surface mount packages.
2N2219A by Texas Instruments

2N2219A

Texas Instruments

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).
2N2219A by Semicoa

2N2219A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Micro Commercial Components

MMBT3906

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
BC847B by Central Semiconductor

BC847B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
SMMBT2222ALT1G by Onsemi

SMMBT2222ALT1G

Onsemi

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
2N2905A by Onsemi

2N2905A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; JEDEC-95 Code: TO-39;
BC847C-13-F by Diodes Incorporated

BC847C-13-F

Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
JANTX2N2222AUA by M/a-com Technology Solutions

JANTX2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 4; Terminal Form: NO LEAD;
MMBT2222A by Good-ark Electronics

MMBT2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Zowie Technology

MMBT2222A

Zowie Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC847CDW1T1G by Onsemi

BC847CDW1T1G

Onsemi

BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.
BC847B by Dc Components

BC847B

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
2N2219A by Microsemi

2N2219A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; JESD-30 Code: O-MBCY-W3;
2N2219A by Swampscott Electronics

2N2219A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222AUA by Silicon Transistor

2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;