Renesas Electronics - GA1L4M-T2-AT

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GA1L4M-T2-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number GA1L4M-T2-AT
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 85; No. of Elements: 1;
Datasheet GA1L4M-T2-AT Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .15 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 85
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