Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | H7N1002AB-E |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .015 ohm; JEDEC-95 Code: TO-220AB; |
| Datasheet | H7N1002AB-E Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 75 A |
| JEDEC-95 Code: | TO-220AB |
| Maximum Pulsed Drain Current (IDM): | 300 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .015 ohm |
