Renesas Electronics - HA21008(5V)TR

  1. Home
  2. Renesas Electronics - HA21008(5V)TR
HA21008(5V)TR by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HA21008(5V)TR
Description WIDE BAND LOW POWER; Construction: COMPONENT;
Datasheet HA21008(5V)TR Datasheet
NAME DESCRIPTION
Construction: COMPONENT
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MGA-62563-TR2G by Agilent Technologies

MGA-62563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
XF1001-SC-0G00 by M/a-com Technology Solutions

XF1001-SC-0G00

M/a-com Technology Solutions

XF1001-SC-0G00 by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.
A33 by M/a-com Technology Solutions

A33

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.
HMC1040LP3CETR by Analog Devices

HMC1040LP3CETR

Analog Devices

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
RF3827TR7 by Qorvo

RF3827TR7

Qorvo

Qorvo's RF3827TR7 is a GAAS wide band medium power amplifier with 20.5 dB gain, operating from 5 MHz to 1500 MHz. It has a max input power of 13 dBm and VSWR of 20, suitable for surface mount applications in RF & microwave systems requiring up to 8V supply voltage.
MAX2839ETN+TD by Maxim Integrated

MAX2839ETN+TD

Maxim Integrated

MAX2839ETN+TD by Maxim Integrated is a narrow band low power RF amplifier with 15 dBm CW input power. Operating from -40 to 85°C, it covers 2300-2700 MHz range. Ideal for RF applications requiring high performance in a compact component package.
RA35H1516M by Mitsubishi Electric

RA35H1516M

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
MGA-62563-BLK by Broadcom

MGA-62563-BLK

Broadcom

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.
AD8354ACPZ-REEL7 by Analog Devices

AD8354ACPZ-REEL7

Analog Devices

AD8354ACPZ-REEL7 by Analog Devices is a RF amplifier with 17.3 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on 3/5 V supplies. Ideal for wideband low-power applications requiring a component construction with matte tin terminals in plastic/epoxy package.
ADL8106ACEZ by Analog Devices

ADL8106ACEZ

Analog Devices

WIDE BAND LOW POWER;
HMC506LP4E by Hittite Microwave

HMC506LP4E

Hittite Microwave

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;
SBB2089ZSR by Rf Micro Devices

SBB2089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
SST12LP08-QXBE by Microchip Technology

SST12LP08-QXBE

Microchip Technology

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.
HMC794LP3ETR by Analog Devices

HMC794LP3ETR

Analog Devices

WIDE BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
HMC441LC3BTR by Analog Devices

HMC441LC3BTR

Analog Devices

HMC441LC3BTR by Analog Devices is a wide band medium power RF amplifier with a gain of 10 dB. It operates at frequencies ranging from 6 GHz to 18 GHz and can handle a max input power of 15 dBm. This surface mount component is commonly used in RF and microwave applications requiring high performance amplification.
HMC517LC4 by Hittite Microwave

HMC517LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;
SBF4089ZSR by Rf Micro Devices

SBF4089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
TGA2214-CP by Qorvo

TGA2214-CP

Qorvo

WIDE BAND HIGH POWER;