Renesas Electronics - HAT2205C-EL-E

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HAT2205C-EL-E by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HAT2205C-EL-E
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .85 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 3 A;
Datasheet HAT2205C-EL-E Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 6
Maximum Power Dissipation (Abs): .85 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .097 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3 A
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