HB66A2568A-25 by Renesas Electronics | Memory ICs

Image shown is a representation only.

Manufacturer	Renesas Electronics
Manufacturer's Part Number	HB66A2568A-25
Description	SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE; No. of Functions: 1;
Datasheet	HB66A2568A-25 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	256KX8
Maximum Seated Height:	13.34 mm
Minimum Supply Voltage (Vsup):	4.5 V
Surface Mount:	NO
No. of Terminals:	60
No. of Words:	262144 words
Terminal Position:	ZIG-ZAG
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XZMA-T60
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Memory Density:	2097152 bit
Memory IC Type:	SRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
Length:	87.63 mm
Maximum Access Time:	25 ns
No. of Words Code:	256K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	5.5 V

Popular Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;