Renesas Electronics - HD1L2Q-T2-AY

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HD1L2Q-T2-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HD1L2Q-T2-AY
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;
Datasheet HD1L2Q-T2-AY Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 1 A
Maximum Power Dissipation (Abs): 2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
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