Renesas Electronics - HD2F2Q

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HD2F2Q by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HD2F2Q
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Moisture Sensitivity Level (MSL): 1;
Datasheet HD2F2Q Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 2 W
Maximum Collector-Emitter Voltage: 70 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 10
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
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