HI2-305-8 by Renesas Electronics | Other Function Semiconductors

Image shown is a representation only.

Manufacturer	Renesas Electronics
Manufacturer's Part Number	HI2-305-8
Description	SPDT; Temperature Grade: MILITARY; No. of Terminals: 10; Package Shape: ROUND; JESD-30 Code: O-MBCY-W10; Nominal Negative Supply Voltage (Vsup): -15 V;
Datasheet	HI2-305-8 Datasheet

NAME	DESCRIPTION
Package Body Material:	METAL
Nominal Negative Supply Voltage (Vsup):	-15 V
Sub-Category:	Multiplexer or Switches
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
No. of Functions:	1
No. of Terminals:	10
Qualification:	Not Qualified
Package Equivalence Code:	CAN10,.23
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Other IC type:	SPDT
Screening Level:	MIL-STD-883 Class B (Modified)
Technology:	CMOS
JESD-30 Code:	O-MBCY-W10
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	125 Cel
Switching (V):	BREAK-BEFORE-MAKE
Nominal Supply Voltage (Vsup):	15 V
Temperature Grade:	MILITARY
Power Supplies (V):	+-15

Popular Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.