HIT667-TZ-EQ by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	HIT667-TZ-EQ
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 1 A; Moisture Sensitivity Level (MSL): 1;
Datasheet	HIT667-TZ-EQ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	40
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.9 W
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Additional Features:	NOT FOR AUTOMOTIVE OR INDUSTRIAL USE
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1

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