Renesas Electronics - HL1541FG

  1. Home
  2. Renesas Electronics - HL1541FG
HL1541FG by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HL1541FG
Description LASER DIODE; Size: 2 mm; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 60 Cel; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Peak Wavelength (nm): 1550;
Datasheet HL1541FG Datasheet
NAME DESCRIPTION
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Nominal Output Power: 5 W
Size: 2 mm
Peak Wavelength (nm): 1550
Maximum Threshold Current: 50 mA
Maximum Operating Temperature: 60 Cel
Minimum Operating Temperature: 0 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TOLD9321(F) by Toshiba

TOLD9321(F)

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 660; Semiconductor Material: GaAlInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
NX8571SC6018-BA-AZ by Renesas Electronics

NX8571SC6018-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1602; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A;
TOLD2000SDA by Toshiba

TOLD2000SDA

Toshiba

LASER DIODE; Size: 1.5 mm; Peak Wavelength (nm): 790; Maximum Threshold Current: 40 mA; Nominal Output Power: 7 W; No. of Functions: 1;
NX8570SC6070D-BA by Renesas Electronics

NX8570SC6070D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1607; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
DL4034-151 by Onsemi

DL4034-151

Onsemi

DL4034-151 by Onsemi is a LASER DIODE with Peak Wavelength of 780nm, Max Forward Current of 0.08A, and Operating Temperature range from -10 °C to 50°C. It is ideal for applications requiring precise optical emission in through-hole mounting setups.
NX8570SC437-BA-AZ by Renesas Electronics

NX8570SC437-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1543; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
NX8565LE761-BC by Renesas Electronics

NX8565LE761-BC

Renesas Electronics

Laser Diodes;
TOLD322CBC by Toshiba

TOLD322CBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel;
CQF23/D13 by NXP Semiconductors

CQF23/D13

NXP Semiconductors

CQF23/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
TOLD320CAA by Toshiba

TOLD320CAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310; Minimum Operating Temperature: 0 Cel;
NX8562LB by Renesas Electronics

NX8562LB

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 1561; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .3 A;
DL3149-053 by Onsemi

DL3149-053

Onsemi

DL3149-053 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
TOLD322CBA by Toshiba

TOLD322CBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 70 Cel;
NX8571SC904-BA by Renesas Electronics

NX8571SC904-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1590;
DL-3150-127 by Onsemi

DL-3150-127

Onsemi

DL-3150-127 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.035A and max forward voltage of 2.3V. Ideal for applications requiring precise laser emission in temp range -10 to 60 °C, with through hole mounting feature.
NX6353EP35-AZ by Renesas Electronics

NX6353EP35-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00000000005 s; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .12 A;
NX8571SC921-BA-A by Renesas Electronics

NX8571SC921-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1592;
NX8570SC712-BA by Renesas Electronics

NX8570SC712-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1571; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
HL6501MG by Renesas Electronics

HL6501MG

Renesas Electronics

LASER DIODE; Mounting Feature: RADIAL MOUNT; Size: 1.6 mm; Semiconductor Material: AlGaInP; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Additional Features: HIGH RELIABILITY;
GH0401FA2K by Sharp Corporation

GH0401FA2K

Sharp Corporation

GH0401FA2K by Sharp Corp is a 405nm LASER DIODE with max output power of 150W and peak current of 0.13A. Ideal for RADIAL MOUNT applications, operating b/w -10 to 75°C, it offers high efficiency in various optoelectronic setups.