Renesas Electronics - HL6501MG

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HL6501MG by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HL6501MG
Description LASER DIODE; Mounting Feature: RADIAL MOUNT; Size: 1.6 mm; Semiconductor Material: AlGaInP; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Additional Features: HIGH RELIABILITY;
Datasheet HL6501MG Datasheet
NAME DESCRIPTION
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Size: 1.6 mm
Maximum Forward Voltage: 3 V
Minimum Operating Temperature: -10 Cel
Mounting Feature: RADIAL MOUNT
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Nominal Output Power: 35 W
Peak Wavelength (nm): 658
Maximum Threshold Current: 70 mA
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 60 Cel
Semiconductor Material: AlGaInP
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