Renesas Electronics - HL6501MG

  1. Home
  2. Renesas Electronics - HL6501MG
HL6501MG by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HL6501MG
Description LASER DIODE; Mounting Feature: RADIAL MOUNT; Size: 1.6 mm; Semiconductor Material: AlGaInP; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Additional Features: HIGH RELIABILITY;
Datasheet HL6501MG Datasheet
NAME DESCRIPTION
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Size: 1.6 mm
Maximum Forward Voltage: 3 V
Minimum Operating Temperature: -10 Cel
Mounting Feature: RADIAL MOUNT
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Nominal Output Power: 35 W
Peak Wavelength (nm): 658
Maximum Threshold Current: 70 mA
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 60 Cel
Semiconductor Material: AlGaInP
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HL7836G by Renesas Electronics

HL7836G

Renesas Electronics

LASER DIODE; Additional Features: HIGH RELIABILITY; Maximum Operating Temperature: 60 Cel; Maximum Threshold Current: 60 mA; Nominal Output Power: 5 W; Peak Wavelength (nm): 785;
TOLD320 by Toshiba

TOLD320

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Maximum Operating Temperature: 65 Cel;
DL-4147-162 by Onsemi

DL-4147-162

Onsemi

DL-4147-162 by Onsemi is a 1mm LASER DIODE with peak wavelength of 650nm. It has max threshold current of 50mA and nominal output power of 12W. Ideal for applications requiring precise laser emission in compact spaces at temperatures ranging from -10 to 70 °C.
TOLD321BCA by Toshiba

TOLD321BCA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310;
TOLD320B by Toshiba

TOLD320B

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1300; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;
SDL5030-111 by Onsemi

SDL5030-111

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 790;
NX8564LE509-CC by Renesas Electronics

NX8564LE509-CC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1550;
NX8570SC338-BA-A by Renesas Electronics

NX8570SC338-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1533; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
TOLD124R by Toshiba

TOLD124R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
TOLD130 by Toshiba

TOLD130

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel;
TOLD323ACA by Toshiba

TOLD323ACA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .000000001 s; Maximum Forward Current: .15 A; Maximum Operating Temperature: 80 Cel;
TOLD320ABC by Toshiba

TOLD320ABC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Maximum Operating Temperature: 70 Cel;
DL-LS5000 by Onsemi

DL-LS5000

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 405;
TOLD9450MC by Toshiba

TOLD9450MC

Toshiba

LASER DIODE; Size: 1.8 mm; Maximum Threshold Current: 95 mA; Shape: ROUND; Peak Wavelength (nm): 650; No. of Functions: 1;
NDL7551P by Renesas Electronics

NDL7551P

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1550; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 60 Cel;
SDL3140-001 by Onsemi

SDL3140-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
SDL6032-201 by Onsemi

SDL6032-201

Onsemi

SDL6032-201 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX6309GH-AZ by Renesas Electronics

NX6309GH-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000005 s;
CQF25C/D41 by NXP Semiconductors

CQF25C/D41

NXP Semiconductors

CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
SFH487506 by Infineon Technologies

SFH487506

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Threshold Current: 880 mA; Spectral Bandwidth: 2 m; Configuration: SINGLE;