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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | HQ1A3M |
| Description | PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel; |
| Datasheet | HQ1A3M Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 2 A |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | BIP General Purpose Small Signal |
| Polarity or Channel Type: | PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 50 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 2 W |
| Maximum Collector-Emitter Voltage: | 20 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
