Renesas Electronics - HQ1F3M-T1-AY

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HQ1F3M-T1-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HQ1F3M-T1-AY
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;
Datasheet HQ1F3M-T1-AY Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 2 A
Maximum Power Dissipation (Abs): 2 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
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