HTT1127ERTL-E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	HTT1127ERTL-E
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
Datasheet	HTT1127ERTL-E Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	12000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	20
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	4 V
Maximum Collector-Base Capacitance:	.65 pF
Peak Reflow Temperature (C):	260

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