Renesas Electronics - HVC190KRF

  1. Home
  2. Renesas Electronics - HVC190KRF
HVC190KRF by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number HVC190KRF
Description PIN DIODE; Surface Mount: YES; Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Resistive Test Current: 10 mA; Nominal Diode Capacitance: .35 pF; Maximum Diode Forward Resistance: 5 ohm;
Datasheet HVC190KRF Datasheet
NAME DESCRIPTION
Diode Element Material: SILICON
Diode Resistive Test Frequency: 100 MHz
Reverse Test Voltage: 50 V
Technology: POSITIVE-INTRINSIC-NEGATIVE
Diode Type: PIN DIODE
Minimum Breakdown Voltage: 50 V
Diode Resistive Test Current: 10 mA
Maximum Operating Temperature: 150 Cel
Maximum Diode Forward Resistance: 5 ohm
Sub-Category: PIN Diodes
Surface Mount: YES
Nominal Diode Capacitance: .35 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BAR9002ELSE6327XTSA1 by Infineon Technologies

BAR9002ELSE6327XTSA1

Infineon Technologies

Infineon's BAR9002ELSE6327XTSA1 is a single PIN diode with 80V breakdown voltage, suitable for C band applications. With 2.3 ohm forward resistance and 0.35 pF capacitance, it operates b/w -55 to 125 °C. Ideal for switching purposes, this chip carrier diode has gold finish terminals and can handle up to 0.15W power dissipation.
HSMP-389C-TR1 by Broadcom

HSMP-389C-TR1

Broadcom

HSMP-389C-TR1 by Broadcom is a PIN diode with 2 elements, 0.3 pF capacitance, and 5V reverse test voltage. It is used for switching applications due to its low forward resistance of 2.5 ohm and breakdown voltage of 100V. The diode operates at a max temperature of 150°C and has a gull wing terminal form.
BAR88-099L4 by Infineon Technologies

BAR88-099L4

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
CLA4607-085LF by Skyworks Solutions

CLA4607-085LF

Skyworks Solutions

CLA4607-085LF by Skyworks Solutions is a PIN diode with 0.35 pF capacitance, 2 ohm forward resistance, and 1.3 W power dissipation. It is used as a limiter in applications requiring breakdown voltage of 180V, operating temperature range from -55 to 150 °C, and Schottky technology for high performance.
BA596 by Infineon Technologies

BA596

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Nominal Diode Capacitance: .23 pF; Terminal Finish: Tin/Lead (Sn/Pb); Reverse Test Voltage: 50 V;
MA4P7446F-1091T by M/a-com Technology Solutions

MA4P7446F-1091T

M/a-com Technology Solutions

PIN DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NSP301MX2WT5G by Onsemi

NSP301MX2WT5G

Onsemi

NSP301MX2WT5G by Onsemi is a PIN diode with high frequency band, 0.23 pF capacitance, and 50V reverse test voltage. It is used in attenuator and switching applications, operating b/w -55 °C to 125°C. This single-configured diode has a small outline package shape for surface mount installation.
SP000010172 by Infineon Technologies

SP000010172

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BXY44-TP by Infineon Technologies

BXY44-TP

Infineon Technologies

PIN DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAP70-05,215 by NXP Semiconductors

BAP70-05,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR151E6327BTSA1 by Infineon Technologies

BAR151E6327BTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR64-04S by Infineon Technologies

BAR64-04S

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR65-03WE6433 by Infineon Technologies

BAR65-03WE6433

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BXY44-FPP by Infineon Technologies

BXY44-FPP

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR6305WH6327XTSA1 by Infineon Technologies

BAR6305WH6327XTSA1

Infineon Technologies

Infineon's BAR6305WH6327XTSA1 is a PIN diode with common cathode, 2 elements, and 0.3 pF capacitance. Ideal for S band applications, it features a max operating temperature of 150°C and forward resistance of 2 ohm. Suitable for switching purposes due to its positive-intrinsic-negative technology and small outline package style.
MA4PBL027 by TE Connectivity

MA4PBL027

TE Connectivity

TE Connectivity's MA4PBL027 is a single PIN diode with 0.04 pF capacitance, ideal for switching applications in the millimeter wave band. With a max power dissipation of 0.15 W and operating temperature of 175°C, this silicon-based diode offers fast response times and high reliability. The ceramic, metal-sealed co-fired package ensures durability in microwave environments.
BAP51-05WT/R by NXP Semiconductors

BAP51-05WT/R

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BA895-H6327 by Infineon Technologies

BA895-H6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Diode Resistive Test Current: 1.5 mA; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
1SV267-TB-E by Onsemi

1SV267-TB-E

Onsemi

1SV267-TB-E by Onsemi is a PIN diode with TIN BISMUTH finish. It can withstand 30s at 260 °C peak reflow temperature. Featuring POSITIVE-INTRINSIC-NEGATIVE tech, it's ideal for RF switches and attenuators in communication systems.
BXY43C by Infineon Technologies

BXY43C

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Minority Carrier Lifetime: .35 us; Nominal Diode Capacitance: .3 pF; Minimum Breakdown Voltage: 150 V; Maximum Operating Temperature: 150 Cel;